Electronic structure of and strained layer superlattices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces
3. Raman scattering from GexSi1−x/Si strained‐layer superlattices
4. Electronic structure of GaAs-Ga1−xAlxAs quantum well and sawtooth superlattices
5. Strain-induced electron states in Si0.75Ge0.25(Si/Si0.5Ge0.5)(001) superlattices
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1. Chapter 10 Si-Based alloys: SiGe and SiGe:C;Semiconductors and Semimetals;2001
2. Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure Defects, and Electronic Properties;Growth of Crystals;1996
3. Ordered silicon-tin structures on a silicon (111) substrate;Journal of Physics: Condensed Matter;1992-09-07
4. General variational expressions for the calculation of the binding energies of anisotropic donor states in stepped quantum wells;Journal of Applied Physics;1991-10-15
5. Electronic properties of HgTe-Hg1−xCdxTe and HgTeZn1−yCdyTe superlattices with ideal and non-ideal interfaces;Superlattices and Microstructures;1991-01
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