Dry Etching of Group III-Group V Compound Semiconductors-Reference-Cited by-同舟云学术

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Dry Etching of Group III-Group V Compound Semiconductors

Published:1984 Issue: Volume: Page:79-112
ISSN:0167-790X
Container-title:Dry Etching for Microelectronics
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Author:

BURTON RANDOLPH H.,GOTTSCHO RICHARD A.,SMOLINSKY GERALD

Publisher

Elsevier

Reference66 articles.

1. Surface Composition and Etching of III-V Semiconductors in Cl2 Ion Beams;Barker;Appl. Phys. Lett.,1982

2. Semiconductors and Electronic Devices;Bar-Lev,1979

3. Light-Emitting Diodes;Bergh,1976

4. Reactive Ion Beam Etching of InP with Cl2;Bosch;Appl. Phys. Lett.,1981

5. Ion Response to Plasma Excitation Frequency;Bruce;J. Appl. Phys.,1981

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions;Journal of Applied Physics;2012-04-15

2. Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6;Journal of Applied Physics;2010-06-15

3. Extensive ab initio study of the valence and low-lying Rydberg states of BBr including spin-orbit coupling;The Journal of Chemical Physics;2006-05-21

4. PE-CVD of Polymer Films: Mechanisms, Chemistry, and Diagnostics;Plasma Processing of Polymers;1997

5. Self-Aligned, Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices;MRS Proceedings;1992

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