Thermodynamic analysis of molecular beam epitaxy of III–V compounds; Application to the GayIn1−yAs multilayer epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE
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3. Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular‐beam expitaxy
4. Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system
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1. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010
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3. Thermodynamic calculations of congruent vaporization and interactions with residual water during magnesium fluoride vacuum deposition;Journal of Crystal Growth;2001-01
4. Thermodynamic analysis of molecular beam epitaxy of MgO(s) II. Epitaxial growth of MgO layers on Fe(001) substrates;Journal of Crystal Growth;2000-11
5. Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers;Calphad;1998-12
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