Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm
2. Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
3. High‐purity GaSb epitaxial layers grown from Sb‐rich solutions
4. A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy
5. Growth‐temperature dependence of electrical and luminescent properties of high‐quality GaSb grown by liquid‐phase epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals;Journal of Physics: Condensed Matter;2002-11-22
3. Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs;Journal of Applied Physics;2001-09-15
4. Scanning tunneling spectroscopy study of erbium doped GaSb crystals;Journal of Applied Physics;1999-08
5. Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique;Journal of Crystal Growth;1999-03
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