Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1388570
Reference23 articles.
1. Type II heterojunctions in the GaInAsSb/GaSb system
2. Recent advances in Sb-based midwave-infrared lasers
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1. The spin–orbit splitting band in InGaAsSb alloys lattice-matched to InAs;Journal of Physics D: Applied Physics;2014-06-24
2. Temperature dependence of the energy gap and spin-orbit splitting in a narrow-gap InGaAsSb solid solution;Applied Physics Letters;2012-05-21
3. Low-Temperature Photoluminescence of In0.14Ga0.86As0.13Sb0.87 Solid Solution Lattice Matched to GaSb;Crystal Growth & Design;2009-05-07
4. Identification of the additional transition around the E0critical point in photoreflectance spectra of GaInAsSb epitaxial films;Journal of Physics: Conference Series;2009-05-01
5. Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/p-InAs heterojunction;Semiconductors;2008-09
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