Free exciton recombination in GaP and layers grown by temperature difference method under controlled vapor pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure
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1. Diffusion of nonstoichiometric defects in n-GaP crystals;Materials Science in Semiconductor Processing;2003-10
2. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers;Materials Science in Semiconductor Processing;2003-10
3. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates;Journal of Electronic Materials;2003-03
4. Controlled vapor-pressure heat-treatment effect on deep levels in liquid-encapsulated czochralski-grown GaP crystals;Journal of Electronic Materials;2002-06
5. Investigation of Deep Levels in GaP Liquid Phase Epitaxial Layers on Substrates with Vapor Pressure Heat Treatment;MRS Proceedings;1999
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