Effects of Vapor Pressure on GaP LED's
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/17/i=S1/a=87/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Free exciton recombination in GaP and layers grown by temperature difference method under controlled vapor pressure;Journal of Crystal Growth;1996-03
2. Fabrication and characteristics of tapered waveguide semiconductor Raman lasers;IEE Proceedings - Optoelectronics;1996
3. Free‐Exciton Recombination in Stoichiometry‐Controlled GaP;Journal of The Electrochemical Society;1993-09-01
4. Radiative recombination mechanisms in stoichiometry‐controlled GaP crystals;Journal of Applied Physics;1990-01
5. On the Correlations between Electrical Properties and Growth Conditions for VPE GaAs Grown in the Hydride System;physica status solidi (a);1986-07-16
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