Band-gap luminescence in strain-symmetrized Sim/Gen superlattices grown by molecular beam epitaxy using gaseous Si2H6 and solid Ge
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Photoluminescence from Localized Excitons in Si/Ge Superlattices
2. Interband Photo- and Electroluminescence from Short-Period Si/Ge Superlattices
3. Photoluminescence in short-period Si/Ge strained-layer superlattices
4. Direct transition energies in strained ten-monolayer Ge/Si superlattices
5. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy;Journal of Crystal Growth;1998-10
2. Ge composition saturation behavior during low-temperature Si1 − xGex growth by disilane and solid Ge molecular beam epitaxy;Journal of Crystal Growth;1997-11
3. Interfaces of strained layer (Ge[sub n]Si[sub m])[sub p] superlattices studied by second-harmonic generation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
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