In situ monitoring of reflection high-energy electron diffraction oscillation during the growth of gallium nitride films by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Growth of GaN and AlGaN for UV/blue p-n junction diodes
4. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
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1. Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials;Handbook of Crystal Growth;2015
2. Observation and control of the surface kinetics of InGaN for the elimination of phase separation;Journal of Applied Physics;2012-07
3. NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy;Journal of Crystal Growth;2012-05
4. Optical monitoring of molecular beam epitaxy growth of AlN∕GaN using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
5. Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry;Journal of Crystal Growth;2003-04
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