Optical monitoring of molecular beam epitaxy growth of AlN∕GaN using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate-Reference-Cited by-同舟云学术

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Optical monitoring of molecular beam epitaxy growth of AlN∕GaN using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate

Published:2007 Issue:3 Volume:25 Page:1066
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Griffiths C. L.,Weeks K. J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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3. In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring;Journal of Electronic Materials;2011-01-29

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