Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Growth and Characterization of GaN on Si(111)
2. Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxy
3. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
4. Photoluminescence of ion‐implanted GaN
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1. Room-temperature photoluminescence of Mg-doped GaN thin films grown by plasma-assisted MOCVD;AIP Advances;2020-04-01
2. Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE;Journal of Crystal Growth;2005-02
3. Epitaxial growth and structure of III-V nitride thin films;Handbook of Thin Films;2002
4. Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN;Plasma Sources Science and Technology;2000-01-07
5. Surface Reconstruction and Surface Morphology of GaN Grown by MBE on GaAs (001);Physica Scripta;1999
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