Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source
2. T. Kikuchi, K. Miyauchi, M. Wada, T. Ohachi, J. Crystal Growth, this issue. doi:10.1016/j.jcrysgro.2004.11.158
3. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
4. Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
5. Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux;Japanese Journal of Applied Physics;2011-01-20
2. Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux;Japanese Journal of Applied Physics;2011-01-01
3. Compact 2.45 GHz microwave ion/atom source;Review of Scientific Instruments;2008
4. Role of excited nitrogen species in the growth of GaN by RF–MBE;Journal of Crystal Growth;2006-07
5. Radio-frequency MBE growth of cubic GaN on 3C-SiC(001)/Si(001) template;physica status solidi (c);2006-06
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