Characterization of GaAs/AlAs interfacial atomic step structures on a (411)A-oriented substrate by transmission electron microscope
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy
3. The scattering of electrons by atoms and crystals. I. A new theoretical approach
4. Numerical evaluations ofN-beam wave functions in electron scattering by the multi-slice method
5. A new theoretical and practical approach to the multislice method
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1. Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures;Bismuth-Containing Alloys and Nanostructures;2019
2. Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface;Journal of Applied Physics;2004-06-15
3. Surface structure of GaAs(2 5 11);Physical Review B;2002-03-27
4. Lattice-matched InxGa1−xAs/InxAl1−xAs quantum wells (x= 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy;Journal of Crystal Growth;2001-07
5. InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy;Journal of Crystal Growth;2001-07
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