Lattice-matched InxGa1−xAs/InxAl1−xAs quantum wells (x= 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
2. Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates
3. Extremely flat interfaces in In0.04Ga0.96As/Al0.3Ga0.7As quantum wells grown on (411)A In0.04Ga0.96As substrates by MBE
4. In[sub 0.05]Ga[sub 0.95]As/Al[sub 0.3]Ga[sub 0.7]As quantum wells grown on a (411)A-oriented In[sub 0.06]Ga[sub 0.94]As ternary substrate by molecular beam epitaxy
5. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
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