Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
2. Single‐longitudinal‐mode GaAs/GaAlAs channeled‐substrate lasers grown by molecular beam epitaxy
3. Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers
4. Study of facet generation during MBE of GaAs on (111)A substrates patterned with ridge-type triangles
5. Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of the growth conditions on the ridge morphology during GaAs deposition on GaAs (001) patterned substrates;Journal of Applied Physics;2004-06
2. A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy;Journal of Crystal Growth;2000-01
3. Light emission and the quantum efficiency of lateral p–n junctions on patterned GaAs (100) substrates;Microelectronics Journal;1999-04
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