Single‐longitudinal‐mode GaAs/GaAlAs channeled‐substrate lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94941
Reference9 articles.
1. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers
2. Transverse-junction-stripe lasers with a GaAs p-n homojunction
3. Transverse mode stabilized Al<inf>x</inf>Ga<inf>1-x</inf>As injection lasers with channeled-substrate-planar structure
4. Reduction of threshold current in GaAlAs terraced substrate lasers
5. Etched buried heterostructure GaAs/GaAlAs injection lasers
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1. Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)A substrates;Journal of Electronic Materials;1999-01
2. Lateral variation of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates;Applied Physics A: Materials Science & Processing;1998-08-01
3. Formation of nanostructured surfaces during molecular beam epitaxy on square-shaped hole and mesa patterns on GaAs(311)A substrates;Journal of Crystal Growth;1998-05
4. ELECTRICAL-PROPERTIES OF LATERAL NPN JUNCTIONS USING MOLECULAR-BEAM EPITAXY-GROWN SI-DOPED GAAS ON PATTERNED SUBSTRATES;J CRYST GROWTH;1995
5. Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates;Journal of Crystal Growth;1995-05
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