Study of facet generation during MBE of GaAs on (111)A substrates patterned with ridge-type triangles
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Characteristics of molecular‐beam epitaxially grown pair‐groove‐substrate GaAs/AlGaAs multiquantum‐well lasers
2. Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers
3. Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures
4. Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells
5. Single quantum wire semiconductor lasers
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)A substrates;Journal of Electronic Materials;1999-01
2. Low dimensional carrier confinement structure grown on patterned GaAs(111)A substrates by molecular beam epitaxy;Microelectronic Engineering;1998-08
3. Lateral variation of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates;Applied Physics A: Materials Science & Processing;1998-08-01
4. Formation of nanostructured surfaces during molecular beam epitaxy on square-shaped hole and mesa patterns on GaAs(311)A substrates;Journal of Crystal Growth;1998-05
5. Self-organization of nanostructures on planar and patterned high-index semiconductor surfaces;Microelectronics Journal;1997-10
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