Generation mechanism of CuAu-I type ordered structures in InGaAs crystals grown on (110) InP substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Study on microstructure of ordered InGaAs crystals grown on (110)InP substrates by transmission electron microscopy
2. TEM investigation of CuAu-I type ordered structures in MBE-grown InGaAs crystals on (110) InP substrates
3. Study on Chemical Reactions on the Growing Surface to Control the Structures of µc-Silicon from Fluorinated Precursors
4. Two-dimensional electron gas mobility in InGaAs/N-InAlAs heterostructures with ordered inGaAs grown on (110)-oriented InP substrates by molecular beam epitaxy
5. Long‐range order in InxGa1−xAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ordering structure along the direction of InAlAs;Journal of Crystal Growth;2004-12
2. The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
3. Basic Aspects of Atomic Ordering in III–V Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
4. Formation mechanism of Al-segregated region in InAlAs/(110)InP;Journal of Crystal Growth;2001-07
5. Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP;Applied Surface Science;2000-06
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