TEM investigation of CuAu-I type ordered structures in MBE-grown InGaAs crystals on (110) InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Long-Range Order inAlxGa1−xAs
2. Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
3. Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition
4. Ordered structure in OMVPE-grown Ga0.5In0.5P
5. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
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1. Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures;Materials Advances;2022
2. Interface intermixing and interdiffusion characteristics in MOVPE grown spontaneous AlxGa1-xAs/GaAs (100) superlattice structures using high resolution X-ray diffraction;Superlattices and Microstructures;2019-02
3. In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process;ACS Omega;2018-11-01
4. Study of thermal stability of spontaneously grown superlattice structures by metalorganic vapor phase epitaxy in AlxGa1−xAs/GaAs heterostructure;AIP Conference Proceedings;2018
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