Two-dimensional electron gas mobility in InGaAs/N-InAlAs heterostructures with ordered inGaAs grown on (110)-oriented InP substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

Two-dimensional electron gas mobility in InGaAs/N-InAlAs heterostructures with ordered inGaAs grown on (110)-oriented InP substrates by molecular beam epitaxy

Published:1991-12 Issue:1-4 Volume:115 Page:504-508
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakata Yoshiaki,Ueda Osamu,Fujii Toshio

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Saturation velocity determination for In0.53Ga0.47As field‐effect transistors

2. Proc. 14th Intern. Symp. on GaAs and Related Compounds;Sasa,1988

3. Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBE

4. A New High-Electron Mobility Monolayer Superlattice

5. Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures

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1. OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets;Journal of Crystal Growth;2001-11

2. Formation Mechanism of Antiphase Boundary Structure in Molecular Beam Epitaxy Grown InGaAs/(110)InP;Japanese Journal of Applied Physics;1999-01-15

3. Microstructure of CuAu-I-type ordered phase in III-V semiconductor alloys grown on a (001) substrate;Physical Review B;1996-10-15

4. TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP;Materials Science Forum;1995-11

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