Heteroepitaxial growth of InP on Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. GaAs heteroepitaxial growth on Si for solar cells
2. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates
3. First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate
4. Optimization of InP / Si heteroepitaxial growth conditions using organometallic vapor phase epitaxy
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2. Growth of III–V semiconductors and lasers on silicon substrates by MOCVD;Future Directions in Silicon Photonics;2019
3. Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-09
4. Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth;physica status solidi (c);2009-12
5. Heterogeneous integration of indium phosphide on silicon by nano-epitaxial lateral overgrowth;2009 IEEE International Conference on Indium Phosphide & Related Materials;2009-05
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