Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues;Handbook of Crystal Growth;2015
2. Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si;physica status solidi (c);2012-05-29
3. Heteroepitaxy and selective area heteroepitaxy for silicon photonics;Current Opinion in Solid State and Materials Science;2012-04
4. Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon;Journal of Crystal Growth;2011-10
5. High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-04-20
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