Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Selective growth of GaAs in the MOMBE and MOCVD systems
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1. Selective area growth on planar masked InP substrates by metal organic vapour phase epitaxy (MOVPE);Progress in Crystal Growth and Characterization of Materials;1997-01
2. ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR OPTOELECTRONIC INTEGRATED CIRCUITS;Integrated Optoelectronics;1995
3. The Chemistry and Growth of MOVPE-Based Selective Epitaxy;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995
4. A modified metalorganic chemical vapor deposition chemistry for improved selective area regrowth;Journal of Crystal Growth;1993-07
5. Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1993-04-15
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