Effect of H2 heat-treatment of excitonic emission in MOCVD-grown CdTe films on (100) GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition
2. High quality Hg1−xCdxTe epitaxial layers by the organometallic process
3. Photoluminescence of CdTe: A comparison of bulk and epitaxial material
4. Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition
5. Interface structure in heteroepitaxial CdTe on GaAs(100)
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1. Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates;Journal of Physical Studies;2021
2. Deposition of polycrystalline Cd1-xZnxTe films on ZnTe/graphite and graphite substrates by close-spaced sublimation;physica status solidi (c);2014-03-24
3. Photoluminescence Analysis of Deep Acceptor in CdTe Films on GaAs(100) Substrates;Japanese Journal of Applied Physics;2010-08-20
4. Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates;Japanese Journal of Applied Physics;2010-07-20
5. Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates;Japanese Journal of Applied Physics;2010-02-22
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