Photoluminescence of CdTe: A comparison of bulk and epitaxial material-Reference-Cited by-同舟云学术

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Photoluminescence of CdTe: A comparison of bulk and epitaxial material

Published:1985-01 Issue:1 Volume:3 Page:76-82
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Giles‐Taylor N. C.,Bicknell R. N.,Blanks D. K.,Myers T. H.,Schetzina J. F.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573250

Cited by 123 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates;Journal of Semiconductors;2024-09-01

2. Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density;Journal of Materials Science: Materials in Electronics;2024-05

3. Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescence;APL Materials;2024-03-01

4. The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe;Journal of Alloys and Compounds;2023-10

5. Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells;Advanced Energy Materials;2023-07-28

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