Photoluminescence Analysis of Deep Acceptor in CdTe Films on GaAs(100) Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
1. Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy
2. Effect of H2 heat-treatment of excitonic emission in MOCVD-grown CdTe films on (100) GaAs substrates
3. Donors and acceptors in tellurium compounds; The problem of doping and self-compensation
4. Photoluminescence spectra of Cl-doped CdTe crystals
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1. Measuring the Absorber Doping Concentration of Si, CdSeTe, and Perovskite Solar Cells Using Injection-Dependent Quasi-Steady-State Photoluminescence;IEEE Journal of Photovoltaics;2023-11
2. Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates;Journal of Physical Studies;2021
3. Variation of phonon coupling factors in the photoluminescence of cadmium telluride by variable excitation power;Optical Materials Express;2017-02-10
4. Atomic-force microscopy and photoluminescence of nanostructured CdTe;Semiconductors;2013-09
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