Physical properties of non-pyrophoric group III precursors for MOVPE-Reference-Cited by-同舟云学术

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Physical properties of non-pyrophoric group III precursors for MOVPE

Published:1991-01 Issue:1-4 Volume:107 Page:309-313
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pohl L.,Hostalek M.,Schumann H.,Hartmann U.,Wassermann W.,Brauers A.,Regel G.K.,Hövel R.,Balk P.,Scholz F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

2. Novel intramolecularly stabilized organogallium and organoindium compounds and their use in MOVPE

3. Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source

4. Proc. 16th Intern. Symp. on GaAs and Related Compounds;Scholz,1990

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1. Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum;Journal of Chemical & Engineering Data;2014-11-05

2. Organo-aluminium and -gallium complexes with ω-NH-functional alkoxide ligands;Dalton Transactions;2008

3. Synthese und Charakterisierung neuer intramolekular stickstoffstabilisierter Organoaluminium- und Organogalliumalkoxide;Zeitschrift für anorganische und allgemeine Chemie;2006-01

4. Intramolekular stickstoffstabilisierte Organoaluminiumverbindungen mit Naphthyl-, Benzyl- und Phenylliganden;Zeitschrift für anorganische und allgemeine Chemie;2004-08

5. Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles;Comprehensive Coordination Chemistry II;2003

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