Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100844
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1. Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum;Journal of Chemical & Engineering Data;2014-11-05
2. Aluminum Nitride;Inorganic Reactions and Methods;2007-05-29
3. Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles;Comprehensive Coordination Chemistry II;2003
4. Die 3-(N,N-Dimethylamino)prop-1-enyl-Gruppe als Chelatligand in Organoindium-Verbindungen;Zeitschrift f�r anorganische und allgemeine Chemie;1997-10
5. Growth of Group III Nitrides. A Review of Precursors and Techniques;Chemistry of Materials;1996-01-01
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