Novel liquid precursors for the growth of InP and GaInAs epitaxial layers by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
2. The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE
3. Reactions of phosphine with trimethylindium
4. Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE
5. Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition
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1. Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum;Journal of Chemical & Engineering Data;2014-11-05
2. Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles;Comprehensive Coordination Chemistry II;2003
3. Bis-phosphino-methane: a new precursor for metalorganic vapor phase epitaxy of phosphides;Journal of Crystal Growth;1996-12
4. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
5. Synthesis and characterization of Me3Ga and Me3In: Adducts of secondary amines;Polyhedron;1995-12
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