Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102003
Reference21 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. High‐power phase‐locked InGaAs strained‐layer quantum well heterostructure periodic laser array
3. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition
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2. Developments in CVD Delivery Systems: A Chemist’s Perspective on the Chemical and Physical Interactions Between Precursors;Chemical Vapor Deposition;2002-12-03
3. Critical layer thickness in MOCVD grown InGaAsGaAs strained quantum wells;Materials Science and Engineering: B;1995-12
4. Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells;Journal of Applied Physics;1995-11
5. Selective epitaxial growth of GaInP by low‐pressure metal‐organic chemical‐vapor deposition using ethyldimethylindium as In source;Applied Physics Letters;1994-10-24
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