Characterization of the optical properties of LPE InxGa1−xAsyP1−y thin layers grown on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
2. Room‐temperature cw operation of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers
3. LPE In1−xGaxP1−zAsz(x∼0.12,z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region
4. GaInAsP/InP avalanche photodiodes
5. Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence of undoped and Er-doped 1.1-μm InGaAsP layers grown by liquid-phase epitaxy;Solid-State Electronics;1993-08
2. Growth and Characterization of In0.83Ga0.17As0.39P0.61Layers by Liquid-Phase Epitaxy Using Erbium Gettering;Japanese Journal of Applied Physics;1993-06-15
3. Investigation of erbium doping of InGaAsP layers grown by liquid‐phase epitaxy;Journal of Applied Physics;1993-04
4. Picosecond luminescence studies of the recombination kinetics in GaInAsP;Solid State Communications;1985-09
5. Ga0.47 In0.53 As—The material for high-speed devices;Pramana;1984-09
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