Growth and Characterization of In0.83Ga0.17As0.39P0.61Layers by Liquid-Phase Epitaxy Using Erbium Gettering-Reference-Cited by-同舟云学术

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Growth and Characterization of In0.83Ga0.17As0.39P0.61Layers by Liquid-Phase Epitaxy Using Erbium Gettering

Published:1993-06-15 Issue:Part 1, No. 6A Volume:32 Page:2587-2591
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Meng-Chyi,Chiu Cheng-Ming,Tu Yuan-Kuang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of InP and GaInAsP layers with low density of defects: Effect of holmium and erbium gettering;Defect Recognition and Image Processing in Semiconductors 1997;2017-11-22

2. Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt;Crystal Research and Technology;2005-04

3. Role of f-Elements in the Growth of InP Layers for Radiation Detectors;Crystal Research and Technology;2001-10

4. LPE InP layers grown in the presence of rare-earth elements;Materials Science and Engineering: B;2001-03

5. Electronic energy levels of Er3+ in ZnInGaS4:Er3+ single crystal and its site symmetry;Journal of Applied Physics;2000-11-15

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