Electronic energy levels of Er3+ in ZnInGaS4:Er3+ single crystal and its site symmetry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1285839
Reference7 articles.
1. Gettering Properties of Praseodymium in GaAs, In0.53Ga0.47As, and InP Grown by Liquid Phase Epitaxy
2. Growth and Characterization of In0.83Ga0.17As0.39P0.61Layers by Liquid-Phase Epitaxy Using Erbium Gettering
3. Time‐of‐flight measurements of minority‐carrier transport inp‐silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural and optical properties of Er3+ion in sol–gel grown LiNbO3;Journal of Physics: Condensed Matter;2006-12-08
2. Growth of ZnInGaS4 by normal freezing method;Journal of Physics and Chemistry of Solids;2005-11
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