The incorporation behavior of As and P in GaInAsP (λ ≈ μm) on InP grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
2. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
3. Electrical and optical properties of GaInAsP grown by gas‐source molecular beam epitaxy
4. Growth of Ga0.29In0.71As0.61P0.39 (λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy
5. InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
2. Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained by Gas Source Molecular Beam Deposition;Journal of Solid State Chemistry;1997-10
3. Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-05
4. Gas source molecular beam epitaxial growth model for Ga x In1?x As y P1?y on GaAs;Optical and Quantum Electronics;1996-10
5. Incorporation of group V elements in Gaxin1−xAsyP1−y grown by gas source molecular beam epitaxy;Journal of Electronic Materials;1996-09
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