Growth of Ga0.29In0.71As0.61P0.39 (λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE
2. InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy
3. High quality InP and In1−xGaxAsyP1−y grown by gas source MBE
4. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
5. Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas;Sensors and Actuators A: Physical;1997-07
2. Solid-source MBE for growth of laser diode materials;Journal of Crystal Growth;1997-05
3. Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas;Journal of Crystal Growth;1997-04
4. Design and characterization of InAsP/InP/GaInP short-period superlattices for long-wavelength multi-quantum barrier grown by chemical beam epitaxy;Journal of Crystal Growth;1997-03
5. Incorporation of group V elements in Gaxin1−xAsyP1−y grown by gas source molecular beam epitaxy;Journal of Electronic Materials;1996-09
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