On the impurity distribution in a thin silicon rod grown by pulling from a melt on pedestal-Reference-Cited by-同舟云学术

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On the impurity distribution in a thin silicon rod grown by pulling from a melt on pedestal

Published:1982-04 Issue:2 Volume:57 Page:428-431
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jain G.C.,Singh S.N.,Kishore R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Semiconductor Silicon;Crossman,1977

2. Silicon Crystals Free of Dislocations

3. Growth of Silicon Bicrystals by the Dash Pedestal-Method

4. Growth of 40 mm diameter silicon crystals by a pedestal technique using electron beam heating

5. Growth of niobium single crystals by Czochralski technique using the “pedestal” method

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon‐germanium alloys;Journal of Applied Physics;1992-05

2. Thermionic emission diffusion model of current conduction in polycrystalline silicon and temperature dependence of mobility;Journal of Applied Physics;1985-04-15

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