Growth of 40 mm diameter silicon crystals by a pedestal technique using electron beam heating
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Silicon Crystals Free of Dislocations
2. Solid-Liquid Interface Morphology of Float-Zoned Silicon Crystals;Ciszek,1969
3. Annealing behavior and etching phenomena of microdefects in dislocation-free float-zone silicon
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1. Numerical modelling for the diameter increase of silicon crystals grown with the pedestal method;Journal of Crystal Growth;2021-06
2. Experimental verification of the of contamination reduction of silicon during electron beam melting due to the use of a gas-dynamic window;IOP Conference Series: Materials Science and Engineering;2021-02-01
3. Optimization of the shape of high-frequency inductor for the pedestal growth of silicon crystals;Magnetohydrodynamics;2019-09
4. Development of silicon growth techniques from melt with surface heating;IOP Conference Series: Materials Science and Engineering;2018-05
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