Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon‐germanium alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350817
Reference6 articles.
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1. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams;International Journal of Materials and Product Technology;2005
2. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals;Journal of Crystal Growth;2002-05
3. Thermoelectric Properties of Hot-pressed Boron Suboxide (B6O);MATERIALS TRANSACTIONS;2002
4. Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle;Journal of Crystal Growth;2000-04
5. Czochralski growth of bulk crystals of Ge1-xSix alloys;Journal of Crystal Growth;1998-01
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