The characterization of heteroepitaxial silicon-Reference-Cited by-同舟云学术

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The characterization of heteroepitaxial silicon

Published:1982-01 Issue:2 Volume:56 Page:281-295
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cullen G.W.,Abrahams M.S.,Corboy J.F.,Duffy M.T.,Ham W.E.,Jastrzebski L.,Smith R.T.,Blumenfeld M.,Harbeke G.,Lagowski J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Misfit dislocations in heteroepitaxial Si on sapphire

2. Dislocation morphology in graded heterojunctions: GaAs1?xPx

3. Cross‐sectional specimens for transmission electron microscopy

4. Early growth of silicon on sapphire. I. Transmission electron microscopy

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1. Structural and optical properties of nc-Si:H thin films deposited by layer-by-layer technique;Journal of Materials Science: Materials in Electronics;2013-11-08

2. Structural and optical properties of the nc-Si:H thin films irradiated by high energetic ion beams;Journal of Non-Crystalline Solids;2013-03

3. Polycrystalline silicon thin films on glass deposited from chlorosilane at intermediate temperatures;The European Physical Journal Applied Physics;2012-05

4. Influence of microstructure and hydrogen concentration on amorphous silicon crystallization;Thin Solid Films;2010-07

5. Silicon Epitaxy by Chemical Vapor Deposition;Handbook of Thin Film Deposition Processes and Techniques;2001

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