Low-defect-density silicon on sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Cross‐sectional electron microscopy of silicon on sapphire
2. Imaging of the silicon on sapphire interface by high‐resolution transmission electron microscopy
3. Heteroepitaxial Semiconductors for Electron Devices;Cullen,1978
4. Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques
5. Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices
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1. Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide;Scientific Reports;2017-10-16
2. Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-07
3. Variation of crystal quality and residual stresses in epitaxially grown thin film systems induced by ion implantation and annealing;Journal of Materials Research;2013-05-14
4. Effects of misfit dislocation and film-thickness on the residual stresses in epitaxial thin film systems: Experimental analysis and modeling;Journal of Materials Research;2012-09-28
5. References;Thin Films by Chemical Vapour Deposition;1990
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