Molecular beam epitaxial growth and characterization of ZnSe on GaAs-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth and characterization of ZnSe on GaAs

Published:1993-08 Issue:3-4 Volume:131 Page:277-282
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Reichow J.,Griesche J.,Hoffmann N.,Muggelberg C.,Rossmann H.,Wilde L.,Henneberger F.,Jacobs K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxy

2. A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy

3. MBE growth mechanisms of ZnSe: Flux ratio and substrate temperature

4. Incorporation processes in MBE growth of ZnSe

5. GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth

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2. Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures;Molecular Beam Epitaxy;2018

3. Molecular beam epitaxy of wide-gap II–VI laser heterostructures;Molecular Beam Epitaxy;2013

4. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy;Applied Surface Science;2010-09

5. Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy;Journal of Crystal Growth;2010-04

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