Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
2. Extended Abstracts 18th Conf. on Solid State Devices and Materials;Okajima,1986
3. The Technology and Physics of Molecular Beam Epitaxy;Yao,1985
4. Atomic layer epitaxy
5. RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms
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1. Growth Rate and Photoluminescence Properties of MEE-ZnSe;physica status solidi (a);1997-03
2. Atomic layer epitaxial growth studies of ZnSe using dimethylzinc and hydrogen selenide;Journal of Crystal Growth;1994-04
3. Molecular beam epitaxial growth and characterization of ZnSe on GaAs;Journal of Crystal Growth;1993-08
4. Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry;Physica B: Condensed Matter;1993-04
5. Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry;Wide-Band-Gap Semiconductors;1993
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