Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Structural and optical properties of high-quality ZnTe homoepitaxial layers
2. ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer
3. Phase matched second harmonie generation using a χ(2) modulated optical waveguide
4. Performance of combined 〈100〉–〈110〉 ZnTe crystals in an amplified THz time-domain spectrometer
5. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy
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4. Structural, surface, and electrical properties of nitrogen ion implanted ZnTe epilayers;Applied Physics A;2013-11-19
5. Effects of a ZnTe buffer layer on structural quality and morphology of CdTe epilayer grown on (001)GaAs by molecular beam epitaxy;Vacuum;2012-02
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