MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers
2. Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
3. Room‐temperature operation of hot‐electron transistors
4. Molecular beam epitaxial growth of In1−xGaxAs1−ySbylattice matched to GaSb
5. Growth of InAs1−xSbx(0
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1. Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP;Japanese Journal of Applied Physics;2004-08-10
2. MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications;MRS Proceedings;2003
3. Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4;Journal of Crystal Growth;1995-05
4. Metalorganic molecular beam epitaxy growth characteristics of GaAs using triethylgallium and trisdimethylaminoarsenic;Journal of Applied Physics;1995-03
5. Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation;Journal of Crystal Growth;1994-03
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