Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE
2. MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb
3. Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
4. Elementary process of the thermal decomposition of alkyl gallium
5. Atomic layer epitaxial growth mechanism of a gallium layer on the (100) As surface of GaAs crystals in MOVPE
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ab initio molecular orbital study on the As-stabilized GaAs(001)-(2 × 4)β1 surface;Surface Science;1997-12
2. Distinguishing the As‐ or Ga‐rich initial reconstruction in short‐pulse supersonic nozzle beam epitaxy of GaAs in real time by millisecond time‐resolved reflectance difference;Applied Physics Letters;1995-11-06
3. STUDY ON DIMER DENSITY EVOLUTION DURING GAAS SHORT-PULSE SUPERSONIC NOZZLE BEAM EPITAXY ON (2X4)GAMMA INITIAL SURFACE BY MILLISECOND TIME-RESOLVED REFLECTANCE DIFFERENCE;J CRYST GROWTH;1995
4. AB-INITIO STUDY ON THE AS-STABILIZED SURFACE-STRUCTURE IN ALAS MOLECULAR-BEAM EPITAXY;J CRYST GROWTH;1995
5. Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2 × 4)γ initial surface by millisecond time-resolved reflectance difference;Journal of Crystal Growth;1995-05
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