Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence-Reference-Cited by-同舟云学术

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Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

Published:1991-01 Issue:1-4 Volume:107 Page:543-548
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Camassel J.,Laurenti J.P.,Juillaguet S.,Reinhardt F.,Wolter K.,Kurz H.,Grützmacher D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

2. Optical characterization of interface disorder in multi-quantum well structures

3. Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice

4. Low-temperature exciton trapping on interface defects in semiconductor quantum wells

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1. Quantitative depth profile analysis of InP/InGaAs hetero-interfaces by as carry-over;Materials Science in Semiconductor Processing;2020-12

2. Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared;Nano Letters;2017-12-27

3. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10

4. High resolution x-ray diffraction analysis of InGaAs∕InP superlattices;Journal of Applied Physics;2006-08-15

5. Interface study on heterostructured GaP–GaAs nanowires;Nanotechnology;2006-07-14

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