Selective MOVPE growth of GaAs on Si and its applications to LEDs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth of GaAs on Si by MOVCD
2. Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice
3. Defect reduction effects in GaAs on Si substrates by thermal annealing
4. G. Coudenys, A. Ackaert, L. Buydens, I. Moerman, P. Demeester and P. Van Daele, to be published.
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2. GaAs epitaxy on Si substrates: modern status of research and engineering;Physics-Uspekhi;2008-05-31
3. Selective epitaxial growth of GaAs on Ge by MOCVD;Journal of Crystal Growth;2006-12
4. Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls;Journal of Electronic Materials;1998-11
5. Recent developments in relaxed and strained lattice mismatched heterostructures;Materials Science and Engineering: B;1991-07
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