Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
2. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
3. Molecular beam epitaxial growth of GaAs on Si(211)
4. Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
5. Technical Digest, 1986 Intern. Electron Devices Meeting (IEDM);Shichijo,1986
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