Growth and characterization of relaxed epilayers of InGaAs on GaAs-Reference-Cited by-同舟云学术

Growth and characterization of relaxed epilayers of InGaAs on GaAs

Published:1993-02 Issue:4 Volume:126 Page:589-600
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dunstan D.J.,Dixon R.H.,Kidd P.,Howard L.K.,Wilkinson V.A.,Lambkin J.D.,Jeynes C.,Halsall M.P.,Lancefield D.,Emeny M.T.,Goodhew P.J.,Homewood K.P.,Sealy B.J.,Adams A.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Axial-strain effects on superlattice band structures

2. Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates

3. Blue‐green laser diodes

4. A photoluminescence study of indium desorption from strained Ga1−xInxAs/GaAs

5. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells

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