RHEED studies of the growth of Si(001) by gas source MBE from disilane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Gas source Si-MBE
2. Gas source silicon molecular beam epitaxy using disilane
3. Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxy
4. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
5. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
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